Top 10 Arxiv Papers Today in Mesoscale And Nanoscale Physics

#1. Imaging electric field dynamics with graphene optoelectronics
Jason Horng, Halleh B. Balch, Allister F. McGuire, Hsin-Zon Tsai, Patrick R. Forrester, Michael F. Crommie, Bianxiao Cui, Feng Wang
The use of electric fields for signalling and control in liquids is widespread, spanning bioelectric activity in cells to electrical manipulation of microstructures in lab-on-a-chip devices. However, an appropriate tool to resolve the spatio-temporal distribution of electric fields over a large dynamic range has yet to be developed. Here we present a label-free method to image local electric fields in real time and under ambient conditions. Our technique combines the unique gate-variable optical transitions of graphene with a critically coupled planar waveguide platform that enables highly sensitive detection of local electric fields with a voltage sensitivity of a few microvolts, a spatial resolution of tens of micrometres and a frequency response over tens of kilohertz. Our imaging platform enables parallel detection of electric fields over a large field of view and can be tailored to broad applications spanning lab-on-a-chip device engineering to analysis of bioelectric phenomena.
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qraal: [1911.09055] Imaging electric field dynamics with graphene optoelectronics https://t.co/CQIrsrGmbu
biophotonicat: Imaging electric field dynamics with graphene optoelectronics. (arXiv:1911.09055v1 [cond-mat.mes-hall]) (relevance: 46%) https://t.co/nNzodNw9bs #biophotonics #biomedicaloptics https://t.co/CeEPaC3OAM
CondensedPapers: Imaging electric field dynamics with graphene optoelectronics. https://t.co/D3ne1w9zZo
QFTang1: RT @CondensedPapers: Imaging electric field dynamics with graphene optoelectronics. https://t.co/D3ne1w9zZo
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Authors: 8
Total Words: 4823
Unqiue Words: 1811

#2. Living on the edge: Topology, electrostatics and disorder
Tineke L. van den Berg, M. Reyes Calvo, Dario Bercioux
We address the co-existence of massless and massive topological edge states at the interface between two materials with different topological phases. We modify the well known Bernevig-Hughes-Zhang model to introduce a smooth function describing the band inversion and the band bending due to electrostatic effects between the bulk of the quantum well and the vacuum. Within this minimal model we identify distinct parameter sets that can lead to the co-existence of the two types of edge states, and that determine their number and characteristics. We propose several experimental setups that could demonstrate their presence in two-dimensional topological systems, as well as ways to regulate or tune the contribution of the massive edge states to the conductance of associated electronic devices. Our results suggest that such states may also be present in novel two-dimensional Van der Waals topological materials.
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CondensedPapers: Living on the edge: Topology, electrostatics and disorder. https://t.co/tbyLhRE2TX
MattChallacombe: RT @CondensedPapers: Living on the edge: Topology, electrostatics and disorder. https://t.co/tbyLhRE2TX
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#3. Observation of Magic Angle and Wall State in Twisted Bilayer Photonic Graphene
Yao Wang, Yi-Jun Chang, Jun Gao, Yong-Heng Lu, Zhi-Qiang Jiao, Fang-Wei Ye, Xian-Min Jin
Graphene, a one-layer honeycomb lattice of carbon atoms, exhibits unconventional phenomena and attracts much interest since its discovery. Recently, an unexpected Mott-like insulator state induced by moir\'e pattern and a superconducting state are observed in magic-angle-twisted bilayer graphene, especially, without correlations between electrons, which gives more hints for the understanding and investigation of strongly correlated phenomena. The photon as boson, behaving differently with fermion, can also retrieve the unconventional phenomena of graphene, such as the bearded edge state which is even never been observed in graphene due to the unstability. Here, we present a direct observation of magic angle and wall state in twisted bilayer photonic graphene. We successfully observe the strong localization and rapid diffusion of photon at the regions with AA and AB stacking order around the magic angle, respectively. Most importantly, we find a wall state showing the photon distribution distinctly separate at the regions with AA...
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CondensedPapers: Observation of Magic Angle and Wall State in Twisted Bilayer Photonic Graphene. https://t.co/JgLw0sHny7
oz_tomoki: RT @tjmlab: Observation of Magic Angle and Wall State in Twisted Bilayer Photonic Graphene https://t.co/VnN8zDfuLt マジックアングル”フォトニック”グラフェンの実…
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#4. Evidence of Rotational Fröhlich Coupling in Polaronic Trions
Maxim Trushin, Soumya Sarkar, Sinu Mathew, Sreetosh Goswami, Shaffique Adam, T. Venkatesan
Electrons commonly couple through Fr\"ohlich interactions with longitudinal optical phonons to form polarons. However, trions possess a finite angular momentum and should therefore couple instead to rotational optical phonons. This creates a polaronic trion whose binding energy would be determined by the crystallographic orientation of the lattice. Here, we demonstrate theoretically within the Fr\"ohlich approach and experimentally by photoluminescence emission that the binding energy of the bare trion (20 meV) is significantly enhanced by the phonons at the interface between two-dimensional semiconductor MoS$_2$ and bulk transition metal oxide SrTiO$_3$. The low-temperature binding energy changes from 60 meV in [001]-oriented substrates to 90 meV for [111] orientation, a result of the counter-intuitive interplay between the rotational axis of the MoS$_2$ trion and that of the SrTiO$_3$ phonon mode.
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CondensedPapers: Evidence of Rotational Fr\"ohlich Coupling in Polaronic Trions. https://t.co/fi9yWPWSBb
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#5. Engineering Floquet Higher Order Topological Insulator by Periodic Driving
Arnob Kumar Ghosh, Ganesh C. Paul, Arijit Saha
We theoretically investigate a periodically driven semimetal in the high frequency regime. The possibility of engineering both Floquet Topological Insulator featuring Floquet edge states and Floquet higher order topological insulating phase, accommodating topological corner modes has been demonstrated starting from the semimetal phase, based on an effective Hamiltonian picture. Topological phase transition takes place in the bulk quasi-energy spectrum with the variation of the drive amplitude where Chern number changes sign from $+1$ to $-1$. This can be attributed to broken time-reversal invariance ($\mathcal{T}$) due to circularly polarized light. When the discrete four-fold rotational symmetry ($\mathcal{C}_4$) is also broken by adding a Wilson mass term alongwith broken $\mathcal{T}$, higher order topological insulator (HOTI), hosting in-gap modes at all the corners, can be realized. The Floquet quadrupolar moment, calculated with the Floquet states, exhibits quantized value $0.5$ (modulo 1) identifying the HOTI phase. The...
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CondensedPapers: Engineering Floquet Higher Order Topological Insulator by Periodic Driving. https://t.co/4r75lIwsDC
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#6. Piezoelectricity in monolayer hexagonal boron nitride
P. Ares, T. Cea, M. Holwill, Y. B. Wang, R. Roldan, F. Guinea, D. V. Andreeva, L. Fumagalli, K. S. Novoselov, C. R. Woods
Two-dimensional (2D) hexagonal boron nitride (hBN) is a wide-bandgap van der Waals crystal with a unique combination of properties, including exceptional strength, large oxidation resistance at high temperatures and optical functionalities. Furthermore, in recent years hBN crystals have become the material of choice for encapsulating other 2D crystals in a variety of technological applications, from optoelectronic and tunnelling devices to composites. Monolayer hBN, which has no center of symmetry, has been predicted to exhibit piezoelectric properties, yet experimental evidence is lacking. Here, by using electrostatic force microscopy, we observed this effect as a strain-induced change in the local electric field around bubbles and creases, in agreement with theoretical calculations. No piezoelectricity was found in bilayer and bulk hBN, where the centre of symmetry is restored. These results add piezoelectricity to the known properties of monolayer hBN, which makes it a desirable candidate for novel electromechanical and...
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CondensedPapers: Piezoelectricity in monolayer hexagonal boron nitride. https://t.co/3PZfJXdisG
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#7. Conductivity of 2D HgTe layer near the critical width. The role of developed edge states network and random mixture of p- and n-domains
M. M. Mahmoodian, M. V. Entin
The conductivity of 2D HgTe quantum well with a width $\sim 6.3$nm, close to the transition from ordinary to topological insulating phases, is studied. The Fermi level is supposed to get to the overall energy gap. The consideration is based on the percolation theory. We have found that the width fluctuations convert the system to a random mixture of domains with positive and negative energy gaps with internal edge states formed near zero gap lines. In the case with no potential fluctuations, the conductance of a finite sample is provided by a random network of the edge states. The zero temperature conductivity of an infinite sample is determined by the free motion of electrons along the zero-gap lines and tunneling between them. The conductance of a single p-n junction, which is crossed by the edge state, is found. The result is applied to the situation when potential fluctuations transform the system to a mixture of p- and n-domains. It is stated that the tunneling across p-n junctions forbids the low-temperature conductivity...
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CondensedPapers: Conductivity of 2D HgTe layer near the critical width. The role of developed edge states network and random mixture of p- and n-domains. https://t.co/A6ctEp7toy
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#8. Oxidized-monolayer Tunneling Barrier for Strong Fermi-level Depinning in Layered InSe Transistors
Yi-Hsun Chen, Chih-Yi Cheng, Shao-Yu Chen, Jan Sebastian Dominic Rodriguez, Han-Ting Liao, Kenji Watanabe, Takashi Taniguchi, Chun-Wei Chen, Raman Sankar, Fang-Cheng Chou, Hsiang-Chih Chiu, Wei-Hua Wang
In 2D-semiconductor-based field-effect transistors and optoelectronic devices, metal-semiconductor junctions are one of the crucial factors determining device performance. The Fermi-level (FL) pinning effect, which commonly caused by interfacial gap states, severely limits the tunability of junction characteristics, including barrier height and contact resistance. A tunneling contact scheme has been suggested to address the FL pinning issue in metal-2D-semiconductor junctions, whereas the experimental realization is still elusive. Here, we show that an oxidized-monolayer-enabled tunneling barrier can realize a pronounced FL depinning in indium selenide (InSe) transistors, exhibiting a large pinning factor of 0.5 and a highly modulated Schottky barrier height. The FL depinning can be attributed to the suppression of metal- and disorder-induced gap states as a result of the high-quality tunneling contacts. Structural characterizations indicate uniform and atomically thin surface oxidation layer inherent from nature of van der Waals...
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CondensedPapers: Oxidized-monolayer Tunneling Barrier for Strong Fermi-level Depinning in Layered InSe Transistors. https://t.co/9D0DIJo6S7
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#9. Detecting Thermal Acoustic Radiation with an Optomechanical Antenna
Robinjeet Singh, Thomas P. Purdy
Nanomechanical systems are generally embedded in a macroscopic environment where the sources of thermal noise are difficult to pinpoint. We engineer a silicon nitride membrane optomechanical resonator such that its thermal noise is acoustically driven by a spatially well-defined remote macroscopic bath. This bath acts as an acoustic blackbody emitting and absorbing acoustic radiation through the silicon substrate. Our optomechanical system acts as a sensitive detector for the blackbody temperature and for photoacoustic imaging. We demonstrate that the nanomechanical mode temperature is governed by the blackbody temperature and not by the local material temperature of the resonator. Our work presents a route to mitigate self-heating effects in optomechanical thermometry and other quantum optomechanics experiments, as well as acoustic communication in quantum information.
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CondensedPapers: Detecting Thermal Acoustic Radiation with an Optomechanical Antenna. https://t.co/1G4Fm476Vy
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#10. Large non-reciprocal absorption and emission of radiation in type-I ferromagnetic Weyl semimetals
Yoichiro Tsurimaki, Xin Qian, Simo Pajovic, Gang Chen
The equality between the spectral, directional emittance and absorptance of an object under local thermal equilibrium is known as Kirchhoff's law of radiation. The breakdown of Kirchhoff's law of radiation is physically allowed by breaking time-reversal symmetry and can open new opportunities for novel non-reciprocal light emitters and absorbers. In this work, we show via simulation that ferromagnetic type-I Weyl semimetals, due to their large anomalous Hall effect, can exhibit large non-reciprocal emittance and absorptance without an external magnetic field by coupling light into non-reciprocal surface plasmons modes. This work points to the applicability of type-I ferromagnetic Weyl semimetals for magneto-optical and energy applications.
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CondensedPapers: Large non-reciprocal absorption and emission of radiation in type-I ferromagnetic Weyl semimetals. https://t.co/2xmWXiguc0
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