Top 10 Arxiv Papers Today in Applied Physics


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#1. Photonic nanobeam cavities with nano-pockets for efficient integration of fluorescent nanoparticles
Johannes E. Fröch, Sejeong Kim, Connor Stewart, Xiaoxue Xu, Ziqing Du, Mark Lockrey, Milos Toth, Igor Aharonovich
Integrating fluorescent nanoparticles with high-Q, small mode volume cavities is indispensable for nanophotonics and quantum technologies. To date, nanoparticles have largely been coupled to evanescent fields of cavity modes, which limits the strength of the interaction. Here, we developed both a cavity design and a fabrication method that enable efficient coupling between a fluorescent nanoparticle and a cavity optical mode. The design consists of a fishbone-shaped, one-dimensional photonic crystal cavity with a nano-pocket located at the electric field maximum of the fundamental optical mode. Furthermore, the presence of a nanoparticle inside the pocket reduces the mode volume substantially and induces subwavelength light confinement. Our approach opens exciting pathways to achieve strong light confinement around fluorescent nanoparticles for applications in energy, sensing, lasing and quantum technologies.
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#2. A Closed-form Solution for the Kinematics of Asymmetric Miura Vertices
Soroush Kamrava, Chang Liu, Alec Q. Orlofsky, Ashkan Vaziri, Samuel M. Felton
The Miura vertex is a versatile origami pattern found in a variety of mechanisms. Previous papers have derived and validated a closed-form solution for the kinematics of a symmetric Miura vertex, but the motion of an asymmetric vertex has only been shown numerically. In this paper, we present the trigonometric derivation of a closed-form solution for the folding of an asymmetric Miura vertex.
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#3. Dual-Wavelength Lasing in Quantum-Dot Plasmonic Lattice Lasers
Jan M. Winkler, Max J. Ruckriegel, Henar Rojo, Robert C. Keitel, Eva De Leo, Freddy T. Rabouw, David J. Norris
Arrays of metallic particles patterned on a substrate have emerged as a promising design for on-chip plasmonic lasers. In past examples of such devices, the periodic particles provided feedback at a single resonance wavelength, and organic dye molecules were used as the gain material. Here, we introduce a flexible template-based fabrication method that allows a broader design space for Ag particle-array lasers. Instead of dye molecules, we integrate colloidal quantum dots (QDs), which offer better photostability and wavelength tunability. Our fabrication approach also allows us to easily adjust the refractive index of the substrate and the QD-film thickness. Exploiting these capabilities, we demonstrate not only single-wavelength lasing but dual-wavelength lasing via two distinct strategies. First, by using particle arrays with rectangular lattice symmetries, we obtain feedback from two orthogonal directions. The two output wavelengths from this laser can be selected individually using a linear polarizer. Second, by adjusting...
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#4. Picosecond Ultrasonics with Miniaturized Semiconductor Lasers
Michal Kobecki, Giuseppe Tandoi, Eugenio Di Gaetano, Marc Sorel, Alexey V. Scherbakov, Thomas Czerniuk, Christian Schneider, Martin Kamp, Sven Höfling, Andrey V. Akimov, Manfred Bayer
There is a great desire to extend ultrasonic techniques to the imaging and characterization of nanoobjects. This can be achieved by picosecond ultrasonics, where by using ultrafast lasers it is possible to generate and detect acoustic waves with frequencies up to terahertz and wavelengths down to nanometers. In our work we present a picosecond ultrasonics setup based on miniaturized mode-locked semiconductor lasers, whose performance allows us to obtain the necessary power, pulse duration and repetition rate. Using such a laser, we measure the ultrasonic echo signal with picosecond resolution in a Al film deposited on a semiconductor substrate. We show that the obtained signal is as good as the signal obtained with a standard bulky mode-locked Ti-Sa laser. The experiments pave the way for designing integrated portable picosecond ultrasonic setups on the basis of miniaturized semiconductor lasers.
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#5. Schottky Barrier Height Engineering In $β$-Ga$_2$O$_3$ Using SiO$_2$ Interlayer Dielectric
Arkka Bhattacharyya, Praneeth Ranga, Muad Saleh, Saurav Roy, Michael A. Scarpulla, Kelvin G. Lynn, Sriram Krishnamoorthy
This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of $\beta$-Ga$_2$O$_3$ by insertion of an ultra-thin SiO$_2$ dielectric interlayer at the metal-semiconductor junction, which can potentially lower the Fermi-level pinning (FLP) effect due to metal-induced gap states (MIGS). Pt and Ni metal-semiconductor (MS) and metal-interlayer-semiconductor (MIS) Schottky barrier diodes were fabricated on bulk n-type doped $\beta$-Ga$_2$O$_3$ single crystal substrates along the (010), (-201) and (100) orientations and were characterized by room temperature current-voltage (I-V) and capacitance-voltage (C-V) measurements. Pt MIS diodes exhibited 0.53 eV and 0.37 eV increment in SBH along the (010) and (-201) orientations respectively as compared to their respective MS counterparts. The highest SBH of 1.81 eV was achieved on the (010)-oriented MIS SBD using Pt metal. The MIS SBDs on (100)-oriented substrates exhibited a dramatic increment ($>$1.5$\times$) in SBH as well as reduction in reverse...
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CondensedPapers: Schottky Barrier Height Engineering In $\beta$-Ga$_2$O$_3$ Using SiO$_2$ Interlayer Dielectric. https://t.co/9OdwXsXWji
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#6. Embedded Waveguide Structures Fabricated in Porous Silicon by means of Lithography
Alexander Kellarev, Shlomo Ruschin
We report the fabrication of diverse light guiding structures embedded in oxidised porous silicon (OPS) by means of patterned pore filling through a single photoresist mask. The pores of OPS were filled with KDP salt from unsaturated solution applied on the sample's surface. Photolithography was used to create the mask. The created structures include straight, bent and tapered waveguides of different widths, and Y-splitters. Light guiding was demonstrated and characterised at wavelength of 1.064 microns.
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#7. A Compact Design of Four-degree-of-freedom Transmission Electron Microscope Holder for Quasi-Four-Dimensional Characterization
Yizhi Zhang, Yeqiang Bu, Xiaoyang Fang, Hongtao Wang
Electron tomography (ET) has been demonstrated to be a powerful tool in addressing challenging problems, such as understanding 3D interactions among various microstructures. Advancing ET to broader applications requires novel instrumentation design to break the bottlenecks both in theory and in practice. In this work, we built a compact four-degree-of-freedom (three-directional positionings plus self-rotation) nano-manipulator dedicated to ET applications, which is called X-Nano transmission electron microscope (TEM) holder. All the movements of the four degrees of freedom are precisely driven by built-in piezoelectric actuators, minimizing the artefacts due to the vibration and drifting of the TEM stage. Full 360o rotation is realized with an accuracy of 0.05o in the whole range, which solves the missing wedge problem. Meanwhile, the specimen can move to the rotation axis with an integrated 3D nano-manipulator, greatly reducing the effort in tracking sample locations during tilting. Meanwhile, in-situ stimulation function can be...
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CondensedPapers: A Compact Design of Four-degree-of-freedom Transmission Electron Microscope Holder for Quasi-Four-Dimensional Characterization. https://t.co/FjDcxqwE9I
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#8. Knock-on doping: A universal method to direct-write dopants in a solid state host
Johannes E. Fröch, Mehran Kianinia, Mu Zhao, Vijay Bhatia, Sejeong Kim, Julie M. Cairney, Weibo Gao, Carlo Bradac, Igor Aharonovich, Milos Toth
Modifying material properties at the nanoscale is crucially important for devices in nanoelectronics, nanophotonics and quantum information. Optically active defects in wide band gap materials, for instance, are vital constituents for the realisation of quantum technologies. Yet, the introduction of atomic defects through direct ion implantation remains a fundamental challenge. Herein, we establish a universal method for material doping by exploiting one of the most fundamental principles of physics - momentum transfer. As a proof of concept, we direct-write arrays of emitters into diamond via momentum transfer from a Xe+ focused ion beam (FIB) to thin films of the group IV dopants pre-deposited onto a diamond surface. We conclusively show that the technique, which we term knock-on doping, can yield ultra-shallow dopant profiles localized to the top 5 nm of the target surface, and use it to achieve sub-50 nm lateral resolution. The knock-on doping method is cost-effective, yet very versatile, powerful and universally suitable for...
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igordownunder: very excited about our new work to create defects in solid! no implanter needed and suitable for any material! #diamond #hBN #2D @sejeong85 @JulieCairney https://t.co/Rd96gAMM7r
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#9. Enhanced radiative efficiency in GaN nanowires grown on sputtered TiN$_{\boldsymbol{\mathsf{x}}}$
T. Auzelle, M. Azadmand, T. Flissikowski, M. Ramsteiner, K. Morgenroth, C. Stemmler, S. Fernández-Garrido, S. Sanguinetti, H. T. Grahn, L. Geelhaar, O. Brandt
GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which presumably originates from point defects. To suppress the formation of these defects, we explore the synthesis of GaN nanowires at temperatures up to 915 $^\circ$C enabled by the use of thermally stable TiN$_x$/Al$_2$O$_3$ substrates. These samples exhibit indeed bound exciton decay times approaching those measured for state-of-the-art bulk GaN. However, the decay time is not correlated with the growth temperature, but rather with the nanowire diameter. The inverse dependence of the decay time on diameter suggests that the nonradiative process in GaN nanowires is not controlled by the defect density, but by the field ionization of excitons in the radial electric field caused by surface band bending.
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CondensedPapers: Enhanced radiative efficiency in GaN nanowires grown on sputtered TiN$_{\boldsymbol{\mathsf{x}}}$. https://t.co/3aSH1tnpPp
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#10. Magnetic, magnetoelastic and corrosion resistant properties of (Fe-Ni) based metallic glasses for structural health monitoring applications
Ariane Sagasti, Veronica Palomares, Jose Maria Porro, Inaki Orue, M. Belen Sanchez Ilarduya, Ana Catarina Lopes, Jon Gutierrez
We have performed a study of the magnetic, magnetoelastic, and corrosion resistance properties of seven different composition magnetoelastic-resonant platforms. For some applications, such as structural health monitoring, these materials must have not only good magnetomechanical properties, but also a high corrosion resistance. In the fabricated metallic glasses of composition Fe(73-x)NixCr5Si10B12, the Fe/Ni ratio was varied (Fe + Ni = 73% at.) thus changing the magnetic and magnetoelastic properties. A small amount of chromium (Cr5) was added in order to achieve the desired good corrosion resistance. As expected, all the studied properties change with the composition of the samples. Alloys containing a higher amount of Ni than Fe do not show magnetic behavior at room temperature, while iron-rich alloys have demonstrated not only good magnetic properties, but also good magnetoelastic ones, with magnetoelastic coupling coefficient as high as 0.41 for x=0 in the Fe73Ni0Cr5Si10B12 (the sample containing only Fe but not Ni)....
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CondensedPapers: Magnetic, magnetoelastic and corrosion resistant properties of (Fe-Ni) based metallic glasses for structural health monitoring applications. https://t.co/OtfzDgzZLC
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