Quantum emitters in hexagonal boron nitride (hBN) are promising building
blocks for the realization of integrated quantum photonic systems. However,
spectral inhomogeneity of the sources limits their potential applications.
Here, we apply tensile strain to quantum emitters embedded in few-layer hBN
films and realize both red and blue spectral shifts with tuning magnitudes up
to 65 meV, a record for any quantum source in a solid-state system. We
demonstrate reversible tuning of the emission and discuss the results in the
framework of electron-phonon coupling. Additionally, evidence for the
modification of spin orbit-coupling between excited and meta-stable states, and
rotation of the emission dipole upon straining is presented and discussed. Our
work demonstrates the potential for the strain tuning of quantum emitters in
layered materials for their employment in scalable quantum photonic networks.

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igordownunder:
@Andres_2DMat @IOPmaterials https://t.co/4GDXMpn03P here we go. Comments would be appreciated!

CondensedPapers:
Strain Engineering of Quantum emitters in Hexagonal Boron Nitride. https://t.co/0QtuSeJR7t

paopapopo:
RT @CondensedPapers: Strain Engineering of Quantum emitters in Hexagonal Boron Nitride. https://t.co/0QtuSeJR7t

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The topological properties of materials are, until now, associated with the
features of their crystalline structure, although translational symmetry is not
an explicit requirement of the topological phases. Recent studies of hopping
models on random lattices have demonstrated that amorphous model systems show a
nontrivial topology. Using {\it ab initio} calculations we show that
two-dimensional amorphous materials can also display topological insulator
properties. More specifically, we present a realistic state-of-the-art study of
the electronic and transport properties of amorphous bismuthene systems,
showing that these materials are topological insulators. These systems are
characterized by the topological index $\mathbb{Z}_{2}=1$ and bulk-edge
duality, and their linear conductance is quantized, ${\cal G}=2e^{2}/h$, for
Fermi energies within the topological gap. Our study opens the path to the
experimental and theoretical investigation of amorphous topological insulator
materials.

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tjmlab:
Toward Realistic Amorphous Topological Insulators
アモルファスビスマセンがアモルファストポロジカル絶縁体になるという予想|･ω･｀)ﾌﾑﾌﾑ
https://t.co/3aN62umrr8

CondensedPapers:
Toward Realistic Amorphous Topological Insulators. https://t.co/cX9b7IrRkR

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Authors: 5

Total Words: 4824

Unqiue Words: 2034

Plasma functionalization of graphene is one of the facile ways to tune its
doping level without the need for wet chemicals making graphene
photoluminescent. Microscopic corrugations in the two-dimensional structure of
bilayer CVD graphene having a quasi-free-suspended top layer, such as graphene
ripples, nanodomes, and bubbles, may significantly enhance local reactivity
leading to etching effects on exposure to plasma. Here, we discovered that
bilayer CVD graphene treated with nitrogen plasma exhibits efficient
UV-green-red emission, where the excitation at 250 nm leads to
photoluminescence with the peaks at 390, 470, and 620 nm, respectively. By
using Raman scattering and spectroscopic ellipsometry, we investigated doping
effects induced by oxygen or nitrogen plasma on the optical properties of
single- and bilayer CVD graphene. The surface morphology of the samples was
studied by atomic force microscopy. It is revealed that the top sheet of
bilayer graphene becomes perforated after the treatment by nitrogen plasma....

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CondensedPapers:
Efficient Green Emission from Edge States in Graphene Perforated by Nitrogen Plasma Treatment. https://t.co/L9X0UER1Ok

CVD_ALD_papers:
Efficient Green Emission from Edge States in Graphene Perforated by Nitrogen Plasma Treatment. https://t.co/Vt82QA3hJq

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Exciton intervalley scattering, annihilation and relaxation dynamics, and
diffusive transport in a monolayer transition metal dichalcogenides are central
to the functionality of devices based on them. This motivated us to investigate
these properties in exfoliated high-quality monolayer MoSe2 using heterodyned
nonlinear four-wave-mixing transient grating spectroscopy. While free exciton
excitations are found to be long-lived (~230 ps), an extremely fast intervalley
scattering ( less than 120 fs) is observed leading to a negligible valley
polarization, consistent with steady state photoluminescence measurements. The
exciton population decay shows an appreciable contribution from exciton-exciton
annihilation reactions with an annihilation constant of ~ 0.01 cm2s-1, which in
addition leads to an extra contribution to the transient grating response. The
underlying excitonic dynamics were numerically modeled by including
exciton-exciton annihilation, also in the diffusion equation, which allows
extraction of the diffusion constant, D...

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CondensedPapers:
Excitonic Transport and Intervalley Scattering in Exfoliated MoSe2 Monolayer Revealed by Four-Wave-Mixing Transient Grating Spectroscopy. https://t.co/37pE9GcIsb

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Transport of electrons at high electric fields is investigated in an
intrinsic three-dimensional Dirac semimetal cadmium arsenide, considering the
scattering of electrons from acoustic and optical phonons. Screening and hot
phonon effect are taken in to account. Expressions for the hot electron
mobility $\mu$ and power loss $P$ are obtained as a function of electron
temperature $T_e$. The dependence of drift velocity $v_d$ on electric field $E$
and electron density $n_e$ has been studied. Hot phonon effect is found to set
in the saturation of $v_d$ at relatively low $E$ and significantly degrades its
magnitude. The drift velocity is found to saturate at a value $v_{ds} \sim
10^7$ cm/s and it is weakly dependent on $n_e$. A large saturation current
density $\sim 10^6$ A/cm$^2$ is predicted.

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CondensedPapers:
Drift velocity saturation and large current density in an intrinsic three-dimensional Dirac semimetal cadmium arsenide. https://t.co/pkadDSlZMv

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By creating a sharp and dense dopant profile of phosphorus atoms buried
within a silicon host, a two-dimensional electron gas is formed within the
dopant region. Quantum confinement effects induced by reducing the thickness of
the dopant layer, from $4.0$\,nm to the single-layer limit, are explored using
angle-resolved photoemission spectroscopy. The location of theoretically
predicted, but experimentally hitherto unobserved, quantum well states known as
the $\Delta$-manifold is revealed. Moreover, the number of carriers hosted
within the $\Delta$-manifold is shown to be strongly affected by the
confinement potential, opening the possibility to select carrier
characteristics by tuning the dopant-layer thickness.

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CondensedPapers:
Observation and origin of the $\Delta$-manifold in Si:P $\delta$-layers. https://t.co/FjtQvGThsY

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Authors: 11

Total Words: 4658

Unqiue Words: 1567

Interface energy and kinetic coefficient of crystal growth strongly depend on
the face of the crystalline lattice. To investigate the kinetic anisotropy and
velocity of different crystallographic faces we use the hyperbolic (modified)
phase field crystal model which takes into account atomic density (as a slow
thermodynamic variable) and atomic flux (as a fast thermodynamic variable).
Such model covers slow and rapid regimes of interfaces propagation at small and
large driving forces during solidification. In example of BCC crystal lattice
invading the homogeneous liquid, dynamical regimes of advancing front
propagating along the selected crystallographic directions are studied. The
obtained velocity and the velocity sequences for different faces are compared
with known results.

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CondensedPapers:
Growth of different faces in a body centered cubic lattice: a case of the phase-field-crystal modeling. https://t.co/tOxHB88rOW

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This article presents a numerical model dedicated to the simulation of field
ion microscopy (FIM). FIM was the first technique to image individual atoms on
the surface of a material. By a careful control of the field evaporation of the
atoms from the surface, the bulk of the material exposed, and, through a
digitally processing a sequence of micrographs, a three-dimensional
reconstruction can be achieved. 3DFIM is particularly suited to the direct
observation of crystalline defects such as vacancies, interstitials, vacancy
clusters, dislocations, and any combinations of theses defects that underpin
the physical properties of materials. This makes 3DFIM extremely valuable for
many material science and engineering applications, and further developing this
technique is becoming crucial. The proposed model enables the simulation of
imaging artefacts that are induced by non-regular field evaporation and by the
impact of the perturbation of the electric field distribution of the distorted
distribution of atoms close to defects. The...

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CondensedPapers:
A model to predict image formation in the three-dimensional field ion microscope. https://t.co/BvDMsJFjlB

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Authors: 8

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Ferromagnetism in certain B2 ordered alloys such as Fe$_{60}$Al$_{40}$ can be
switched on, and tuned, via antisite disordering of the atomic arrangement. The
disordering is accompanied by a $\sim$1 % increase in the lattice parameter.
Here we performed a systematic disordering of B2 Fe$_{60}$Al$_{40}$ thin films,
and obtained correlations between the order parameter ($S$), lattice parameter
($a_0$), and the induced saturation magnetization ($M_{s}$). As the lattice is
gradually disordered, a critical point occurs at 1-$S$=0.6 and $a_0$=291 pm,
where a sharp increase of the $M_{s}$ is observed. DFT calculations suggest
that below the critical point the system magnetically behaves as it would still
be fully ordered, whereas above, it is largely the increase of $a_0$ in the
disordered state that determines the $M_{s}$. The insights obtained here can be
useful for achieving tailored magnetic properties in alloys through
disordering.

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CondensedPapers:
Magneto-structural correlations in a systematically disordered B2 lattice. https://t.co/Spt4m4AtSm

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Authors: 12

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We systematically investigate the effect of strain and doping on the polar
metal phase in lithium osmate, LiOsO$_3$, using first-principles calculations.
We demonstrate that the polar metal phase in LiOsO$_3$ can be controlled by
biaxial strain. Based on density functional calculations, we show that a
compressive biaxial strain enhances the stability of the polar $R3c$ phase. On
the other hand, a tensile biaxial strain favors the centrosymmetric
$R\overline{3}c$ structure. Thus, strain emerges as a promising control
parameter over polar metallicity in this material. We uncover a strain-driven
quantum phase transition under tensile strain, and highlight intriguing
properties that could emerge in the vicinity of this polar to non-polar metal
transition. We examine the effect of charge doping on the polar metal phase. By
means of electrostatic doping as well as supercell calculations, we find that
screening from additional charge carriers, expected to suppress the polar
distortions, have only a small effect on them. Rather...

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CondensedPapers:
Effect of strain and doping on the polar metal phase in LiOsO$_3$. https://t.co/ZlgfDCz4gz

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Authors: 1

Total Words: 5403

Unqiue Words: 1575

Assert is a website where the best academic papers on arXiv (computer science, math, physics), bioRxiv (biology), BITSS (reproducibility), EarthArXiv (earth science), engrXiv (engineering), LawArXiv (law), PsyArXiv (psychology), SocArXiv (social science), and SportRxiv (sport research) bubble to the top each day.

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